參數(shù)資料
型號: HM1-6504B883
廠商: Intersil Corporation
英文描述: 4096 x 1 CMOS RAM
中文描述: 4096 × 1 CMOS存儲器
文件頁數(shù): 5/10頁
文件大?。?/td> 167K
代理商: HM1-6504B883
6-138
f
TABLE 3. HM-6504/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
HM-6504S/883
UNITS
LIMITS
MIN
MAX
Input Capacitance
CI
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1
T
A
= +25
o
C
-
8
pF
Output
Capacitance
CO
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1
T
A
= +25
o
C
-
10
pF
Chip Enable Output
Disable Time
(3)
TELQX
VCC = 4.5 and 5.5V
1
-55
o
C
T
A
+125
o
C
5
-
ns
Chip Enable Output
Disable Time
(4)
TEHQZ
VCC = 4.5 and 5.5V
HM-6504S/883
1
-55
o
C
T
A
+125
o
C
-
50
ns
VCC = 4.5 and 5.5V
HM-6504B/883
1
-55
o
C
T
A
+125
o
C
-
80
ns
VCC = 4.5 and 5.5V
HM-6504/883
1
-55
o
C
T
A
+125
o
C
-
100
ns
Write Enable Read
Mode Setup Time
(12)
TWHEL
VCC = 4.5 and 5.5V
1
-55
o
C
T
A
+125
o
C
0
-
ns
High Level Output
Voltage
VOHL
VCC = 4.5V, IO = -100
μ
A
1
-55
o
C
T
A
+125
o
C
VCC -
0.4
-
V
NOTE:
1. The parameters listed in Table 3 are controlled via design, or process parameters are characterized upon initial design and after major
process and/or design changes.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%/5004
1
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A
Samples/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Groups C & D
Samples/5005
1, 7, 9
HM-6504/883
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