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參數(shù)資料
| 型號(hào)： | HMMC-5618 |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0326 X 0.0326 INCH, DIE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | HMMC-5618 |
3
Applications
The HMMC-5618 is a GaAs
MMIC medium-power amplifier
designed for optimum Class–A
efficiency and flat gain perfor-
mance from 6 GHz to 20 GHz. It
has applications as a cascadable
gain stage for EW amplifier,
buffer stages, LO–port driver,
phased–array radar, and trans-
mitter amplifiers used in com-
mercial communication
systems. The MMIC solution is a
cost effective alternative to hy-
brid assemblies.
Biasing and Operation
The MMIC amplifier is normally
biased with a single positive
drain supply connected to both
VD1 and VD2 bond pads as
shown in Figure 10. The recom-
mended drain supply voltage is
3 to 5 volts. If desired, the first
stage drain bonding pad can be
biased separately to provide a
small amount of gain slope con-
trol or bandwidth extension as
demonstrated in Figure 2.
No ground wires are required
because all ground connections
are made with plated through-
holes to the backside of the de-
vice.
Gate bias pads (VG1 and VG2)
are also provided to allow ad-
justments in gain, RF output
power, and DC power dissipa-
tion, if necessary. No connec-
tion to the gate pads is needed
for single drain-bias operation.
However, for custom applica-
tions, the DC current flowing
through the input and/or output
gain stage may be adjusted by
applying a voltage to the gate
bias pad(s) as shown in Figure
10b. A negative gate-pad voltage
will decrease the drain current.
The gate–pad voltage is approx-
imately zero volts during opera-
tion with no DC gate supply.
Refer to the Absolute Maximum
Ratings table for allowed DC
and thermal conditions.
Assembly Techniques
It is recommended that the RF
input, RF output, and DC supply
connections be made using 0.7
mil diameter gold wire. The de-
vice has been designed so that
optimum performance is real-
ized when the RF input and RF
output bond–wire inductance is
approximately 0.2 nH(‘0 mils)
as demonstrated in Figures 4, 6,
and 7.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assem-
bly.
MMIC ESD precautions, han-
dling considerations, die attach
and bonding methods are criti-
cal factors in successful GaAs
MMIC performance and reliabil-
ity.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
Additional References:
AN #49, "HMMC-5618 (6–20
GHz) Amplifier" and PN #14,
"HMMC-5618 Driven by an
HMMC-5020."
IN
VD1
VD2
OUT
FEEDBACK
NETWORK
MATCHING
VG2
VG1
2K
1K
Figure 1.
Simplified Schematic Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMMC-5618 | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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| HMU-PAT-FH-K103 | RF/MICROWAVE FIXED ATTENUATOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5620 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP 20GHZ 7.5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMD47 | 制造商:SPRAGUE 功能描述:CAPACITOR SPRAGUE |
| HMM-HH | 制造商:Cooper Bussmann 功能描述: |
| HMMXS10 | 制造商:Sprague/Vishay 功能描述:CD310X0075 |
| HMN12816D | 制造商:HANBIT 制造商全稱(chēng):Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
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