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參數(shù)資料
| 型號： | HMMC-5618 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0326 X 0.0326 INCH, DIE |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | HMMC-5618 |
5
[1]Effect of 0.2nH inductance in the RF input and RF output bond wires is modeled from measured wafer–probe tests calibrated at the pads of the MMIC device.
[2]Wafer–probed measurements.
2
22
6
10
14
18
Frequency (GHz)
0
Spec Range
(5.9–20 GHz)
Figure 7.
Effects of Input/Output Bond Wire
Inductance on Output Return Loss[1]
5
10
15
20
25
Includes 0.2nH
wire inductance
Wafer–Probed
Measurements
Ou
tp
ut
Re
tu
rn
Lo
ss
(d
B)
50
0
10
20
Sm
al
l-S
ig
na
lG
ai
n
(d
B)
10
0
2
22
6
10
14
18
Gain
Frequency (GHz)
VD1=VD2=5.0V, VG1=VG2=Open
Re
ve
rs
e
Is
ol
at
io
n
(d
B)
20
30
40
5
15
Figure 4.
Effects of Input/Output Bond Wire
Inductance on Gain and Isolation[1]
Wafer-Probed
Measurements
Includes 0.2nH
wire inductance
Spec Range
(5.9–20 GHz)
Isolation
Figure 5.
Noise Figure versus Frequency[2]
No
ise
Fi
gu
re
(d
B)
4
20
8
16
10
0
8
6
4
2
Frequency (GHz)
VD1=VD2=5.0V, VG1=VG2=Open
12
(5.9–20 GHz)
Gain
Psat
P1dB
10
20
18
16
14
12
Sm
al
l-S
ig
na
lG
ai
n
(d
B)
22
16
12
14
20
18
P -
1d
B
an
d
P s
at
(d
Bm
)
0
100
20
40
60
80
Temperature (°C)
VD1=VD2=5.0V, VG1=VG2=Open
6 GHz
12 GHz
20 GHz
0.025 dB/°C
VD1=VD2=5.0V, VG1=VG2=Open
Temperature (°C)
To
ta
lD
ra
in
Cu
rre
nt
(m
A)
0
100
20
40
60
80
125
95
75
85
115
105
-0.08 mA/°C
Figure 8.
Power and Gain versus Backside
Temperature[2]
Figure 9.
Drain Current versus Backside Temperature[2]
VD1=VD2=5.0V, VG1=VG2=Open
2
22
6
10
14
18
Frequency (GHz)
0
VD1=VD2=5.0V, VG1=VG2=Open
Spec Range
(5.9–20 GHz)
Figure 6.
Effects of Input/Output Bond Wire
Inductance on Input Return Loss[1]
In
pu
tR
et
ur
n
Lo
ss
(d
B) 5
10
15
20
25
Includes 0.2nH
wire inductance
Wafer-Probed
Measurements
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