參數(shù)資料
型號: HN29V51211T-50
廠商: Hitachi,Ltd.
英文描述: 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述: 512M超過32113型快閃記憶體部門(542581248位)
文件頁數(shù): 17/42頁
文件大小: 306K
代理商: HN29V51211T-50
HN29V51211 Series
17
Status Transition
Deep
standby
Power off
V
CC
CE
CE
Status register
read
Status register
read
OE
OE
Status register
read
OE
00H/F0H
FFH
CE
SA (1), SA (2)
OE
, SC
SC,
CDE
SC,
CDE
SC,
CDE
PD(m)
to
PD(m+j)
OE
SC
CA(1)
CA(2)
CA(1)'
CA(2)'
CA(1)'
CA(2)'
CA(1)
CA(2)
RES
ID read
90H
CDE
,
OE
Output
disable
Standby
Error
standby
FFH
CE
Sector
Erase setup
Sector
address input
20H
SA (1), SA (2)
Erase
start
B0H
FFH
Erase finish
Status register
read
OE
Program
(1)/(4) setup
Sector address
input
Column address
input
10H
/11H
SA (1),
SA (2)
Program
start
Program
data input
PD0 to
PD2111
FFH
Program finish
Data recovery
read setup
01H*
1
Data recovery
write setup
Sector address
input
12H*
1
FFH
40H
SA(1)
SA(2)
Data recovery
read
OE
, SC
Read (1) / (2)
setup
Sector address
input
Read (1) / (2)
Column address
input
ID read setup
Status register
read
OE
Program (2)/(3)
setup
Sector address
input
1FH
/0FH
SA (1),
SA (2)
Program
start
Program
data input
PD0 to
PD2111*3
FFH
FFH*
2
CE
*
2
Program finish
BUSY
40H
40H
Output
disable
Status register clear
50H
ERROR
Program error or
Erase error
Notes: 1. (01H)/(12H) Data recovery read/write can be used only for Program (1), (2), (3), (4) errors.
2. When reset is done by
CE
or FFH, error status flag is cleared.
3. When Program (3) mode, input data is PD2048 to PD2111.
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