參數(shù)資料
型號(hào)： HN29V51211T-50
廠商： Hitachi,Ltd.
英文描述： 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述： 512M超過(guò)32113型快閃記憶體部門(mén)（542581248位）
文件頁(yè)數(shù)： 19/42頁(yè)
文件大?。?/td> 306K
代理商： HN29V51211T-50
HN29V51211 Series
19
DC Characteristics
(V
CC
= 2.7 V to 3.6 V, Ta = 0 to +70C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
SB1
I
SB2
—
—
2
μA
Vin = V
SS
to V
CC
Vout = V
SS
to V
CC
CE
= V
IH
CE
= V
CC
± 0.2 V,
RES
= V
CC
± 0.2 V
RES
= V
SS
± 0.2 V
Iout = 0 mA, f = 0.2 MHz
Output leakage current
—
—
2
μA
Standby V
CC
current
—
0.3
1
mA
—
30
50
μA
Deep standby V
CC
current
Operating V
CC
current
I
SB3
I
CC1
I
CC2
—
1
20
μA
—
2
20
mA
—
10
20
mA
Iout = 0 mA, f = 20 MHz
Operating V
CC
current (Program) I
CC3
Operating V
CC
current (Erase)
Input voltage
—
20
40
mA
In programming
I
CC4
V
IL
V
IH
V
ILR
V
IHR
V
OL
V
OH
—
20
40
mA
In erase
–0.3*
1, 2
—
0.8
V
2.0
—
V
CC
+ 0.3*
3
0.2
V
Input voltage (
RES
pin)
–0.2
—
V
V
CC
– 0.2 —
—
V
CC
+ 0.2
0.4
V
Output voltage
—
V
I
OL
= 2 mA
I
OH
= –2 mA
2.4
—
—
V
Notes: 1. V
min = –1.0 V for pulse width 50 ns in the read operation. V
IL
min = –2.0 V for pulse width 20
ns in the read operation.
2. V
IL
min = –0.6 V for pulse width 20 ns in the erase/data programming operation.
3. V
max = V
+ 1.5 V for pulse width 20 ns. If V
IH
is over the specified maximum value, the
operations are not guaranteed.
AC Characteristics
(V
CC
= 2.7 V to 3.6 V, Ta = 0 to +70C)
Test Conditions
Input pulse levels: 0.4 V/2.4 V
Input pulse levels for
RES
: 0.2 V/V
CC
– 0.2 V
Input rise and fall time: 5 ns
Output load: 1 TTL gate + 100 pF (Including scope and jig.)
Reference levels for measuring timing: 0.8 V, 1.8 V
相關(guān)PDF資料
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