參數(shù)資料
型號(hào)： HN29V51211T-50
廠商： Hitachi,Ltd.
英文描述： 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
中文描述： 512M超過(guò)32113型快閃記憶體部門(mén)（542581248位）
文件頁(yè)數(shù)： 6/42頁(yè)
文件大?。?/td> 306K
代理商： HN29V51211T-50
HN29V51211 Series
6
Memory Map and Address
7FFFH
7FFEH
7FFDH
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
3
1
800H
83FH
Control bytes
2048 + 64 bytes
Column address
Sector address
Address
Sector address
Column address
Cycles
SA (1): First cycle
SA (2): Second cycle
CA (1): First cycle
CA (2): Second cycle
I/O0
A0
A8
A0
A8
I/O1
A1
A9
A1
A9
I/O2
A2
A10
A2
A10
I/O3
A3
A11
A3
A11
I/O4
A4
A12
A4
×
I/O5
A5
A13
A5
×
I/O6
A6
A14
A6
×
I/O7
A7
×
*
2
A7
×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An
×
means "Don't care". The pin level can be set to either V
IL
or V
IH
, referred
to DC characteristics.
相關(guān)PDF資料
PDF描述
HN29W12811T-60 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29V51211T-50H 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Flash Application Design Guidelines Others
HN29VB800R-10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800R-12 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800SERIES 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
HN29VB800T-10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
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