參數(shù)資料
型號： HS1-82C37ARH-Sample
廠商： Harris Corporation
英文描述： Radiation Hardened CMOS High Performance Programmable DMA Controller
中文描述： 輻射加固的CMOS高性能可編程DMA控制器
文件頁數(shù)： 5/28頁
文件大?。?/td> 253K
代理商： HS1-82C37ARH-SAMPLE
5
Specifications HS-82C37ARH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+6.5V
Input or Output Voltage Applied . . . . . . . .VSS - 0.3V to VDD + 0.3V
for All Grades
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Typical Derating Factor. . . . . . . . . . . . 4mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26.3mW/C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .13.9mW/C
θ
JA
θ
JC
5
o
C/W
10
o
C/W
38
o
C/W
72
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage Range (VDD) . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -1.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
LIMITS
UNITS
MIN
MAX
TTL Output High Voltage
VOH1
VDD = 4.5V, IO = -2.5mA,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
3.0
-
V
CMOS Output High Volt-
age
VOH2
VDD = 4.5V, IO = -100
μ
A,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VDD-
0.4
-
V
Output Low Voltage
VOL1
VDD = 4.5V, IO = +2.5mA,
VIN = 0V or 4.0V
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.4
V
Input Leakage Current
IIL or IIH
VDD = 5.5V, VIN = 0V or
5.5V Pins: 6, 7, 11-13, 16-19
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-1.0
1.0
μ
A
Output Leakage Current
IOZL or
IOZH
VDD = 5.5V, VIN = 0V or
5.5V Pins: 1-4, 21-23, 26-
30, 32-40
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-10
10
μ
A
Standby Power Supply
Current
IDDSB
VDD = 5.5V, IO = 0mA,
VIN = GND or VDD
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
+50
μ
A
Operating Power Supply
Current
IDDOP
VDD = 5.5V, IO = 0mA,
VIN = GND or VDD,
f = 5MHz
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
20
mA
Functional Tests
FT
VDD = 4.5V and 5.5V,
VIN = GND or VDD,
f = 1MHz
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
Noise Immunity Functional
Test
FN
VDD = 4.5V and 5.5V, VIN =
GND or VDD - 1.5V and
VDD = 4.5V, VIN = 0.8V or
VDD
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
-
Spec Number
518058
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