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參數(shù)資料
| 型號(hào)： | HUF75309T3ST |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 88K |
| 代理商： | HUF75309T3ST |
25
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
0
1
2
3
4
25
50
75
100
125
150
R
θ
JA
= 110
o
C/W
0.001
0.01
0.1
1
10
-1
10
0
10
1
10
2
10
3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-4
10
-5
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
0.1
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
o
C
R
θ
JA
= 110
o
C/W
100
μ
s
10ms
1ms
V
DSS
(
MAX
) = 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
200
1
10
10
3
50
10
2
10
1
10
0
10
-1
10
-2
10
-3
t, PULSE WIDTH (s)
I
D
,
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
R
θ
JA
= 110
o
C/W
HUF75309T3ST
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| HUF75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| HUF75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75321D3ST_S2457 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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