參數(shù)資料
型號: HY27US08121M
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 26/43頁
文件大?。?/td> 729K
代理商: HY27US08121M
Rev 0.6 / Oct. 2004
26
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 11: Operating and AC Measurement Conditions
Note : (1). TBD
Table 12: Capacitance
Note: T
A
= 25
o
C
, f = 1 MHz. C
IN
and C
I/O
are not 100% tested.
Parameter
NAND Flash
Unit
Min
Max
Supply Voltage (V
CC
)
1.8V devices
1.7
1.95
V
2.6V devices
(1)
2.4
2.8
V
3.3V devices
2.7
3.6
V
Ambient Temperature (T
A
)
Commercial Temp.
0
70
o
C
Indurstrial Temp.
-40
85
o
C
Load Capacitance (C
L
) (1 TTL GATE and C
L
)
1.8V devices
30
pF
2.6V devices
(1)
30
pF
3.3V devices
100
pF
Input Pulses Voltages
1.8V devices
0
V
CC
V
2.6V devices
(1)
0
V
CC
V
3.3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices
V
CC
/2
V
2.6V devices
(1)
V
3.3V devices
1.5
V
Input Rise and Fall Times
5
ns
Symbol
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
I/O
Input/Output Capacitance
V
IL
= 0V
10
pF
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