參數(shù)資料
型號: HY27US08121M
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 32/43頁
文件大?。?/td> 729K
代理商: HY27US08121M
Rev 0.6 / Oct. 2004
32
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Note:1. CLE = Low, ALE = Low, WE = High.
Figure 24. Sequential Data Output after Read AC Waveforms
Figure 25. Read Status Register AC Waveform
I/O
RE
RB
Data Out
Data Out
Data Out
tRLRL
(Read Cycle time)
tEHQZ
tRHQZ
tRLQV
tRHQZ
tRLQV
tBHRL
tRHRL
(RE High Holdtime)
tRLQV
(RE Accesstime)
CE
I/O
RE
CE
WE
CLE
Status Register
Output
70h
tCLLRL
tWHCLL
tWHEH
tCLHWL
tELWL
tWLWH
tELQV
tWHRL
tEHQZ
tRHQZ
tRLQV
tDZRL
tDVWH
(Data Setup time)
tWHDX
(Data Hold time)
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