參數(shù)資料
型號: HY29F002TT-90
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
中文描述: 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
封裝: TSOP-32
文件頁數(shù): 28/38頁
文件大?。?/td> 381K
代理商: HY29F002TT-90
28
Rev. 4.1/May 01
HY29F002T
AC CHARACTERISTICS
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 17. Data# Polling Timings (During Automatic Algorithms)
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ[2], DQ[6]) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 18. Toggle Polling Timings (During Automatic Algorithms)
t
CH
t
OE
t
CE
t
RC
VA
Complement
Complement
True
Valid Data
Status Data
Status Data
True
Valid Data
DQ[6:0]
DQ[7]
WE#
OE#
CE#
Addresses
VA
VA
t
ACC
t
OEH
t
OH
t
DF
t
CH
t
OE
t
CE
t
RC
Valid Status
Valid Status
Valid Status
DQ[6], [2]
WE#
OE#
CE#
Addresses
VA
VA
VA
t
OEH
t
OH
t
DF
VA
(second read)
(first read)
(stops toggling)
Valid Data
t
ACC
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