參數(shù)資料
型號： HY5PS121623F
英文描述： 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
中文描述： 32Mx16 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內存- 512M
文件頁數(shù)： 34/66頁
文件大小： 862K
代理商： HY5PS121623F
Rev. 0.52/Nov. 02 34
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
DC Electrical Characteristics and Operating Conditions
TEST CONDITION FOR Rtt MEASUREMENTS (Note1)
Measurement Definition for Rtt (eff)
Apply VIHac and VILac to test pin seperately, then measure current I(VIHac) and I(VILac) respectively.
Measurement Definition for Rtt (mis)
Measure voltage (VM) at test pin (midpoint) with no load.
Note1 : VIHac, VILac, and VDDQ values defined in SSTL_18 (JC-16 item #103).
AC Electrical Characteristics and Operating Conditions
Note1 ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
Note2 ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
Parameter / Condition
SYMBOL
MIN
NOM
MAX
UNITS
NOTES
Rtt effective impedance value for EMRS(A6, A2)=0, 1; 75 ohm
Rtt1(eff)
60
75
90
ohm
1
Rtt effective impedance value for EMRS(A6, A2)=1, 0; 150 ohm
Rtt2(eff)
120
150
80
ohm
1
Rtt mismatch tolerance between any pull-up/pull-down pair
Rtt(mis)
-3.75
+3.75
%
1
Parameter / Condition
SYMBOL
MIN
MAX
UNITS
NOTES
ODT turn-on delay
tAOND
2
2
tCK
ODT turn-on
tAON
tAC(min)
tAC(max)+1ns
ns
1
ODT turn-on(Power Down mode)
tAONPD
tAC(min)+2ns
2tCK+tAC(max)+1ns
ns
ODT turn-off delay
tAOFD
2.5
2.5
tCK
ODT turn-off
tAOF
tAC(min)
tAC(max)+1ns
ns
2
ODT turn-off (Power Down mode)
tAOFPD
tAC(min)+2ns
2.5tCK+tAC(max)+1ns
ns
Rtt(eff)
I(VIHac)
I(VILac)
–
------------------------–
=
Rtt(mis)
VDDQ
------------------
1
–
100%
×
=
相關PDF資料
PDF描述
HY5PS121623LF 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
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