參數(shù)資料
型號(hào): HY5PS121623F
英文描述: 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
中文描述: 32Mx16 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M
文件頁數(shù): 44/66頁
文件大?。?/td> 862K
代理商: HY5PS121623F
Rev. 0.52/Nov. 02 44
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
Write to Read Opeation
Minimum time interval from burst write to burst read is “CL-1+BL/2+tWTR” (Internal Write to Read command delay)
/CK
CK
Q0
Q1 Q2 Q3
Read
Bank A
Posted CAS AL=2
Read latency = 5clks
CMD
DQS
DQ
Write
Bank A
Posted CAS AL=2
Write latency= 4clks
D0 D1 D2 D3
CL=3clks, AL=2clks
BL=4, tWTR=2clks
Min. Write to Read Turn Around = CL-1+BL/2+tWTR
CL=3CLKs, AL=2CLK, BL=4, tWTR=2CLKs
相關(guān)PDF資料
PDF描述
HY5PS121623LF 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12423F 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12423LF 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823F 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823LF 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5PS121623LF 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12421AF 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12421AF-C3 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12421AF-C4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM
HY5PS12421AF-E3 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR2 SDRAM