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參數(shù)資料
| 型號(hào)： | HYB 314100BJL-70 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動(dòng)態(tài) RAM(快速頁面模式)) |
| 中文描述： | 4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁面模式）（4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁面模式）） |
| 文件頁數(shù)： | 22/23頁 |
| 文件大小： | 1153K |
| 代理商： | HYB 314100BJL-70 |
Semiconductor Group
22
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Test Mode Entry
Test Mode
The HYB314100BJ/BJL is organized 4 194 304 words by 1- bit but can internally be configured as
524 288 words by 8-bits. A WE, CAS-before-RAS cycle puts the device into Test Mode.
In Test Mode, data is written into 8 sectors in parallel and retrieved the same way. If, upon reading,
all bits are equal, the data output pin indicates a “1”. If any of the bits differ, the data output pin
indicates a “0”. In Test Mode the 4M DRAM can be tested as if it were a 512K DRAM. Test Mode
is exited by any refresh operation which is not a WE, CAS- before-RAS cycle. Addresses A10R,
A10C and A0C do not care during Test Mode.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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