參數(shù)資料
型號(hào): HYB 314100BJL-70
廠商: SIEMENS AG
英文描述: 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
中文描述: 4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(快速頁(yè)面模式)(4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(快速頁(yè)面模式))
文件頁(yè)數(shù): 8/23頁(yè)
文件大小: 1153K
代理商: HYB 314100BJL-70
Semiconductor Group
8
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Output buffer turn-off delay
t
OFF
0
13
0
15
0
20
ns
12
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
8
10
10
ns
Write command pulse width
8
10
10
ns
Write command setup time
Write command to RAS lead time
t
RWL
Write command to CAS lead time
t
CWL
Data setup time
0
0
0
ns
13
13
15
20
ns
13
15
20
ns
t
DS
t
DH
0
0
0
ns
14
Data hold time
10
10
15
ns
14
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
115
130
155
ns
RAS to WE delay time
50
60
70
ns
13
CAS to WE delay time
13
15
20
ns
13
Column address to WE delay
time
25
30
35
ns
13
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
35
40
45
ns
CAS precharge time
10
10
10
ns
Access time from CAS
precharge
30
35
40
ns
7
RAS pulse width
t
RAS
t
RHCP
50
200 k 60
200 k 70
200 k ns
CAS precharge to RAS Delay
30
35
40
ns
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB314100BJL-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
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HYB314100BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
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HYB314171BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
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