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參數(shù)資料
| 型號： | HYB 314100BJL-70 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| 中文描述： | 4米× 1位動態(tài)隨機存儲器（快速頁面模式）（4米× 1位動態(tài)隨機存儲器（快速頁面模式）） |
| 文件頁數(shù)： | 6/23頁 |
| 文件大小： | 1153K |
| 代理商： | HYB 314100BJL-70 |
Semiconductor Group
6
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Average
V
CC
supply current during
CAS before RAS refresh mode
-50 version
-60 version
-70 version
I
CC6
–
–
–
70
60
55
mA
2)4)
For Low Power Version only:
Battery backup current (average power supply
current in battery backup mode):
(CAS = CAS before RAS cycling or 0.2 V,
WE =
V
CC
– 0.2 V or 0.2 V,
A0 to A10 =
V
CC
– 0.2 V or 0.2 V;
D
I
=
V
CC
– 0.2 V or 0.2 V or open,
t
RC
= 125
μ
s,
t
RAS
=
t
RAS
min = 1
μ
s)
I
CC7
–
250
μ
A
–
Capacitance
T
A
= 0 to 70 C;
V
CC
= 3.3 V
±
0.3 V;
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10, DI)
C
I1
C
I2
C
IO
–
5
pF
Input capacitance (RAS, CAS, WE)
–
7
pF
Output capacitance (DO)
–
7
pF
DC Characteristics
(cont’d)
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V ,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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