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參數(shù)資料
| 型號： | HYB 39S128800CT |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4列 × 4M位 × 8)同步動態(tài)RAM) |
| 中文描述： | 128兆位（4banks ×的4Mb × 8）同步DRAM（128M的（4 × 4分列位× 8）同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 13/42頁 |
| 文件大?。?/td> | 280K |
| 代理商： | HYB 39S128800CT |
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HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
13
1.00
DQM Function
DQM has two functions for data I/O read and write operations. During reads, when it turns to “high”
at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM
Data Disable Latency
t
DQZ
). It also provides a data mask function for writes. When DQM is activated,
the write operation at the next clock is prohibited (DQM Write Mask Latency
t
DQW
= zero clocks).
Power Down
In order to reduce standby power consumption, a power down mode is available. All banks must be
precharged and the necessary Precharge delay (
t
RP
) must occur before the SDRAM can enter the
Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver
circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh
operations, therefore the device can’t remain in Power Down mode longer than the Refresh period
(
t
REF
) of the device. Exit from this mode is performed by taking CKE “high”. One clock delay is
required for power down mode entry and two clocks for exit.
Auto Precharge
Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS
timing accepts one extra address, CA10, to determine whether the chip restores or not after the
operation. If CA10 is high when a Read Command is issued, the Read with Auto-Precharge function
is initiated. If CA10 is high when a Write Command is issued, the Write with Auto-Precharge function
is initiated. The SDRAM automatically enters the precharge operation a time delay equal to
t
WR
(Write recovery time) after the last data in.
Precharge Command
There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock timing, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2, two clocks before the last data out for CAS
latency = 3 and three clocks before the last data out for CAS latency = 4. Writes require a time delay
t
WR
from the last data out to apply the precharge command.
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| HYB 39S16160CT-6 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S128800CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128800CT-7.5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| HYB39S128800CT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128800CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128800FE-7 | 制造商:Qimonda 功能描述: |
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