參數資料
型號: HYB 39S128800CT
廠商: SIEMENS AG
英文描述: 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4列 × 4M位 × 8)同步動態(tài)RAM)
中文描述: 128兆位(4banks ×的4Mb × 8)同步DRAM(128M的(4 × 4分列位× 8)同步動態(tài)RAM)的
文件頁數: 16/42頁
文件大?。?/td> 280K
代理商: HYB 39S128800CT
HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
16
1.00
Operating Currents
T
A
= 0 to 70
°
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Notes
3. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7.5
and at 100 MHz for -8/-8A parts. Input signals are changed once during
t
CK
, excepts for
I
CC6
and
for standby currents when
t
CK
= infinity.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
V
DDQ
current is excluded.
Parameter & Test Condition
Symb. -7.5
-8
Unit
Note
max.
Operating current
t
RC
=
t
RC(MIN.)
,
t
CK
=
t
CK(MIN.)
Outputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong
manner to maximize gapless data
access
I
CC1
160
160
160
150
150
150
mA
mA
mA
3
Precharge standby current
in Power Down Mode
CS =
V
IH (MIN.)
, CKE
V
IL(MAX.)
Precharge standby current
in Non Power Down Mode
CS =
V
IH (MIN.)
, CKE
V
IH(MIN.)
No operating current
t
CK
= min., CS =
V
IH (MIN.)
,
active state (max. 4 banks)
t
CK
= min
I
CC2P
1.5
mA
3
t
CK
= min
I
CC2N
40
35
mA
3
CKE
V
IH(MIN.)
CKE
V
IL(MAX.)
I
CC3N
I
CC3P
50
45
mA
3
10
mA
3
Burst Operating Current
t
CK
= min
Read command cycling
I
CC4
x4
x8
x16
100
100
100
90
90
90
mA
mA
mA
3, 4
Auto Refresh Current
t
CK
= min
Auto Refresh command cycling
I
CC5
230
210
mA
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V
standard
version
I
CC6
1.5
mA
3
L-version
0.8
μ
A
3
相關PDF資料
PDF描述
HYB 39S16160CT-5.5 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合))
HYB 39S16160CT-6 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合))
HYB 39S16160CT-7 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合))
HYB 39S256160T 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM)
HYB 39S256400T 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM)
相關代理商/技術參數
參數描述
HYB39S128800CT-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM
HYB39S128800CT-7.5 制造商:Infineon Technologies AG 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
HYB39S128800CT-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM
HYB39S128800CT-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM
HYB39S128800FE-7 制造商:Qimonda 功能描述: