參數(shù)資料
型號: HYB 39S64400CT
廠商: SIEMENS AG
英文描述: 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動態(tài)RAM)
中文描述: 64兆比特同步DRAM(6400位(4 × 4分列位× 4)同步動態(tài)RAM)的
文件頁數(shù): 8/52頁
文件大小: 346K
代理商: HYB 39S64400CT
HYB 39S64400/800CT(L)
64-MBit Synchronous DRAM
Data Book
8
12.99
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Note:
1.
V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Device state is Full Page Burst operation.
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
Operation
Device
State
Idle
3
Active
3
Active
3
CKE
n-1
CKE
n
CS
RAS
CAS
WE
DQ
M
A0-9,
A11
A10
BA0
BA1
Row Activate (ACT)
H
X
L
L
H
H
X
V
V
V
Read (READ)
H
X
L
H
L
H
X
V
L
V
Read w/ Autoprecharge
(READA)
H
X
L
H
L
H
X
V
H
V
Write (WRITE)
Active
3
Active
3
H
X
L
H
L
L
X
V
L
V
Write w/ Autoprecharge
(WRITEA)
H
X
L
H
L
L
X
V
H
V
Row Precharge (PRE)
Any
H
X
L
L
H
L
X
X
L
V
Precharge All (PREA)
Any
H
X
L
L
H
L
X
X
H
X
Mode Register Set (MRS)
Idle
H
X
L
L
L
L
X
V
V
V
No Operation (NOP)
Any
H
X
L
H
H
H
X
X
X
X
Device Deselect (INHBT)
Any
H
X
H
X
X
X
X
X
X
X
Auto Refresh (REFA)
Idle
H
H
L
L
L
H
X
X
X
X
Self Refresh Entry (REFS-EN) Idle
H
L
L
L
L
H
X
X
X
X
Self Refresh Exit (REFS-EX)
Idle
(Self
Refr.)
L
H
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Entry (PDN-EN)
Idle
Active
5
H
L
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Exit (PDN-EX)
Any
(Power
Down)
L
H
H
X
X
X
X
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
X
X
X
X
L
X
X
X
Data Write/Output Disable
Active
H
X
X
X
X
X
H
X
X
X
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