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參數(shù)資料
| 型號(hào)： | HYB 5118165BSJ |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式)) |
| 中文描述： | 100萬× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（100萬× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁面模式）） |
| 文件頁數(shù)： | 6/24頁 |
| 文件大小： | 192K |
| 代理商： | HYB 5118165BSJ |
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
6
1998-10-01
DC Characteristics
(cont’d)
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values Unit
Notes
min.
max.
Common Parameters
Input leakage current
(0 V
≤
V
IH
≤
V
CC
+ 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
V
CC
+ 0.3 V)
Average
V
CC
supply current
I
I(L)
– 10
10
μ
A
1
I
O(L)
– 10
10
μ
A
1
-50 ns version
-60 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC MIN.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
Average
V
CC
supply current, during RAS-only refresh
cycles
I
CC1
–
–
130
115
mA
mA
2, 3, 4
2, 3, 4
I
CC2
I
CC3
–
2
mA
–
-50 ns version
-60 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC MIN.
)
Average
V
CC
supply current, during hyper page mode
(EDO)
–
–
130
115
mA
mA
2, 4
2, 4
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, during CAS-before-RAS
refresh mode
I
CC4
–
–
50
40
mA
mA
2, 3, 4
2, 3, 4
I
CC5
–
1
mA
1
-50 ns version
-60 ns version
(RAS, CAS cycling:
t
RC
=
t
RC MIN.
)
I
CC6
–
–
130
115
mA
mA
2, 4
2, 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 5118165BST-60 | 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式)) |
| HYB3118165BSJ-50 | 1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB 514100BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM) |
| HYB514100BJ-50 | 4M x 1-Bit Dynamic RAM |
| HYB 514100BJ-50 | 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5118165BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BSJ-60 | 制造商:Siemens 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| HYB5118165BSJBST-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
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