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| 型號(hào)： | HYB18T1G800AFL-37 |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 1 Gbit DDR2 SDRAM |
| 中文描述： | 1千兆位DDR2內(nèi)存 |
| 文件頁(yè)數(shù)： | 52/89頁(yè) |
| 文件大?。?/td> | 1752K |
| 代理商： | HYB18T1G800AFL-37 |
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Page 52 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
2.8.4 Concurrent Auto-Precharge
DDR2 devices support the “Concurrent Auto-Precharge” feature. A Read with Auto-Precharge enabled, or a Write
with Auto-Precharge enabled, may be followed by any command to the other bank, as long as that command does
not interrupt the read or write data transfer, and all other related limitations (e.g. contention between Read data
and Write data must be avoided externally and on the internal data bus.
The minimum delay from a Read or Write command with Auto-Precharge enabled, to a command to a different
bank, is summarized in the table below. As defined, the WL = RL - 1 for DDR2 devices which allows the command
gap and corresponding data gaps to be minimized.
From Command
To Command
(different bank,
non-interrupting command)
Minimum Delay with
Concurrent Auto-Pre-
charge Support
Units
Note
WRITE w/AP
Read or Read w/AP
(CL -1) + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
1)
Read w/AP
Read or Read w/AP
BL/2
tCK
Write or Write w/AP
BL/2 + 2
tCK
Precharge or Activate
1
tCK
1)
Note:
1) This rule only applies to a selective Precharge command to another banks, a Precharge-All command is
illegal
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| HYB18T1G800AFL-5 | 1 Gbit DDR2 SDRAM |
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| HYB18T1G800TC-37 | MEMORY SPECTRUM |
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相關(guān)代理商/技術(shù)參數(shù) |
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| HYB18T1G800BF-3S | 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線(xiàn)串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF) |
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
| HYB18T256800AF-5 | 制造商:Infineon Technologies AG 功能描述: |
| HYB18T512161BF-25 | 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA |
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