參數(shù)資料
型號(hào): HYB18T256160AF-37
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 85/90頁
文件大?。?/td> 1246K
代理商: HYB18T256160AF-37
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
INFINEON Technologies
Page 85 Rev. 1.02 May 2004
8.4 Overshoot and Undershoot Specification
8.4.1 AC Overshoot / Undershoot Specification for Address and Control Pins
8.4.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2
-400
DDR2
-533
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.9
0.9
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
0.9
0.9
V
Maximum overshoot area above VDD
0.75
0.56
0.45
V.ns
Maximum undershoot area below VSS
0.75
0.56
0.45
V.ns
Parameter
DDR2
-400
DDR2
-533
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.9
0.9
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
0.9
0.9
V
Maximum overshoot area above VDDQ
0.38
0.28
0.23
V.ns
Maximum undershoot area below VSSQ
0.38
0.28
0.23
V.ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
V
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
V
相關(guān)PDF資料
PDF描述
HYB18T256160AF-5 256 Mbi t DDR2 SDRAM
HYB18T256160AL-3S 256 Mbi t DDR2 SDRAM
HYB18T256400AF 256 Mbi t DDR2 SDRAM
HYB18T256400AF-3 256 Mbi t DDR2 SDRAM
HYB18T256400AF-37 256 Mbi t DDR2 SDRAM
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