參數(shù)資料
型號: HYB18T256160AF-5
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 72/90頁
文件大?。?/td> 1246K
代理商: HYB18T256160AF-5
Page 72 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
6. IDD Specifications and Measurement Conditions
6.1 IDD Specifications
(VDDQ = 1.8V
±
0.1V; VDD = 1.8V
±
0.1V, 0
o
C to T
CASEmax
.)
Symbol
Parameter/Condition
I/O
-5
DDR2 -400
-3.7
DDR2 -533
-3 & -3S
DDR2 - 667
Unit
max.
max.
max.
IDD0
IDD1
IDD2PPrecharge Power-Down Current
IDD2NPrecharge Standby Current
IDD2QPrecharge Quiet Standby Current:
Operating Current
all
50
55
60
mA
Operating Current
all
55
60
65
mA
all
4
4
4
mA
all
28
36
45
mA
all
20
25
30
mA
IDD3P
Active Power-Down Standby
Current
MRS(12)=0
all
13
16
20
mA
MRS(12)=1
all
4
4
4
mA
IDD3NActive Standby Current
all
30
35
40
mA
IDD4ROperating Current Burst Read
x4/x8
x16
60
70
70
80
80
90
mA
IDD4WOperating Current Burst Write
x4/x8
x16
70
90
85
100
100
115
mA
IDD5BBurst Auto-Refresh Current (tRFC=tRFCmin.)
IDD5DDistributed Auto-Refresh Current (tRFC=7.8μs)
IDD6
Self-Refresh Current for standard products
IDD6
Self-Refresh Current for low power products
all
80
85
90
mA
all
6
6
6
mA
all
4
4
4
mA
all
2
2
2
mA
IDD7
Operating Current
x4/x8
x16
125
140
135
150
145
160
mA
相關(guān)PDF資料
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HYB18T256160AL-3S 256 Mbi t DDR2 SDRAM
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