參數(shù)資料
型號: HYB3164160T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54
文件頁數(shù): 15/26頁
文件大?。?/td> 383K
代理商: HYB3164160T-60
Semiconductor Group
19
HYB 3164(5)160T-50/-60
4M x 16-DRAM
Write Cycle (OE Controlled Write)
Valid Data
t
RWL
t
WP
t
OEH
t
ODD
t
CWL
t
DZO
t
OEA
t
CLZ
t
DS
t
OEZ
t
DH
t
RC
VIH
VIL
Row
Address
t
DZC
“H” or “L”
Hi-Z
Hi-Z
Column
Address
Address
Row
t
ASC
t
RAD
t
RAL
t
CAH
t
RAH
RAS
Address
WRITE
OE
I/O1-I/O16
(Inputs)
I/O1-I/O16
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
.
t
RAS
t
CSH
t
CAS
t
RP
t
CRP
t
RSH
t
RCD
t
ASR
t
ASR
UCAS
LCAS
相關(guān)PDF資料
PDF描述
HYB3165160T-60 4M x 16-Bit Dynamic RAM
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HYB39L128160AC-8 128-MBIT SYNCHRONOUS LOW-POWER DRAM
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