參數(shù)資料
型號: HYB3164160T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54
文件頁數(shù): 8/26頁
文件大小: 383K
代理商: HYB3164160T-60
Semiconductor Group
12
HYB 3164(5)160T-50/-60
4M x 16-DRAM
Average
V
cc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling: CAS =
V
IH: tRC = tRC min.)
Average
V
cc supply current,
during fast page mode:
-60 ns version
(RAS =
V
IL
, CAS, address cycling: tPC=tPC min.)
Standby Vcc supply current
(RAS=CAS=
V
cc-0.2V)
Average Vcc supply current, during CAS-before-
RAS refresh mode:
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC3
110 (140)
100 (120)
mA
mA
2) 4)
-50 ns version
I
CC4
85 (85)
75 (75)
mA
mA
2) 3) 4)
I
CC5
200
A
-50 ns version
I
CC6
110 (140)
100 (120)
mA
mA
2) 4)
I
CC7
400
A
Capacitance
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
C
I1
C
I2
C
IO
5
pF
Input capacitance (RAS, CAS, WRITE, OE)
7
pF
I/O capacitance (I/O1-I/O16)
7
pF
DC Characteristics
(cont’d)
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V, (values in brackets for HYB 3165160T)
Parameter
Symbol
Limit Values
Unit Note
min.
max.
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