參數(shù)資料
型號： HYB3164160T-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 4M x 16-Bit Dynamic RAM
中文描述： 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54
文件頁數(shù)： 7/26頁
文件大?。?/td> 383K
代理商： HYB3164160T-60
Semiconductor Group
11
HYB 3164(5)160T-50/-60
4M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 C
Storage temperature range.........................................................................................– 55 to 150 C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V, (values in brackets for HYB 3165160T)
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V <
V
in < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V <
Vout
< Vcc )
Average
Vcc
supply current:
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS=
V
ih)
I
I(L)
– 2
2
μ
A
I
O(L)
– 2
2
μ
A
I
CC1
–
–
110 (140)
100 (120)
mA
mA
2) 3) 4)
I
CC2
–
2
mA
–
相關(guān)PDF資料
PDF描述
HYB3165160T-60 4M x 16-Bit Dynamic RAM
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