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參數(shù)資料
| 型號(hào)： | HYB3164160T-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16-Bit Dynamic RAM |
| 中文描述： | 4M X 16 FAST PAGE DRAM, 60 ns, PDSO54 |
| 文件頁數(shù)： | 9/26頁 |
| 文件大?。?/td> | 383K |
| 代理商： | HYB3164160T-60 |
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Semiconductor Group
13
HYB 3164(5)160T-50/-60
4M x 16-DRAM
AC Characteristics
(note: 6,7,8)
T
A
= 0 to 70 C,
V
CC
= 3.3
±
0.3V
Parameter
Symbol
HYB
3164(5)16T-50
HYB
3164(5)16T-60
Unit
Note
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
90
–
110
–
ns
RAS precharge time
30
–
40
–
ns
RAS pulse width
50
100k
60
100k
ns
CAS pulse width
13
100k
15
100k
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
10
–
10
–
ns
RAS to CAS delay time
18
37
20
45
RAS to column address delay time
13
25
15
30
ns
RAS hold time
13
–
15
–
ns
CAS hold time
50
–
60
–
ns
CAS to RAS precharge time
5
–
5
–
ns
Transition time (rise and fall)
3
30
3
30
ns
7
Refresh period for HYB3164160T
–
128
–
128
ms
Refresh period for HYB3165160T
–
64
–
64
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
t
RRH
–
50
–
60
ns
8, 9
Access time from CAS
–
13
–
15
ns
8, 9
Access time from column address
–
25
–
30
ns
8, 10
OE access time
–
13
–
15
ns
8
Column address to RAS lead time
25
–
30
–
ns
Read command setup time
0
–
0
–
ns
Read command hold time
0
–
0
–
ns
11
Read command hold time referenced
to RAS
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
0
–
0
–
ns
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3165160T-60 | 4M x 16-Bit Dynamic RAM |
| HYB39L128160AC | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-75 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-8 | 128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT | BJAWBMSpecialty DRAMs Mobile-RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3164165AT | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165AT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165AT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165ATL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
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