參數(shù)資料
型號(hào): HYB39L128160AT-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBIT SYNCHRONOUS LOW-POWER DRAM
中文描述: 128 - Mbit同步低功率DRAM
文件頁(yè)數(shù): 15/49頁(yè)
文件大?。?/td> 938K
代理商: HYB39L128160AT-8
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
15
2003-02
Operating Currents
T
CASE
= 0 to 70
°
C (commercial)
V
DD
=
V
DDQ
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Capacitance :
T
CASE
= 0 to 70
°
C
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
-
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
-
3.8
pF
Input/Output Capacitance (DQ)
C
IO
-
6.0
pF
Parameter & Test Condition
Symb. -7.5
-8
Unit
Note
Operating current
t
=
t
one bank access
I
CC1
70
65
mA
3,4
Precharge standby current
in Power Down Mode
CS =
V
IH (MIN.)
, CKE
V
IL(MAX.)
Precharge standby current
in Non Power Down Mode
CS =
V
IH (MIN.)
, CKE
V
IH(MIN.)
No operating current
t
= min., CS =
V
,
active state (max. 4 banks)
t
CK
= min
I
CC2P
0.4
0.4
mA
3
t
CK
= min
I
CC2N
20
15
mA
3
CKE
V
IH(MIN.)
CKE
V
IL(MAX.)
I
CC3P
I
CC3N
35
31
mA
3
3
3
mA
3
Burst Operating Current
t
CK
= min
Read command cycling
I
CC4
70
60
mA
3,4
Auto Refresh Current
t
CK
= min, trc = trcmin.
Auto Refresh command cycling
I
CC5
160
150
mA
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V,
t
CK
= infinity
I
CC6
350
μ
A
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