參數(shù)資料
型號: HYB39L128160AT-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBIT SYNCHRONOUS LOW-POWER DRAM
中文描述: 128 - Mbit同步低功率DRAM
文件頁數(shù): 18/49頁
文件大?。?/td> 938K
代理商: HYB39L128160AT-8
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
18
2003-02
CAS(a) to CAS(b) Command
Period
t
CCD
1
1
CLK
Refresh Cycle
Refresh Period
(4096 cycles)
t
REF
64
64
ms
Self Refresh Exit Time
t
SREX
1
1
CLK
Read Cycle
Data Out Hold Time
t
OH
t
LZ
3
3
ns
2, 5, 6
Data Out to Low Impedance
Time
1
0
ns
Data Out to High Impedance
Time
t
HZ
3
7
3
8
ns
DQM Data Out Disable
Latency
t
DQZ
2
2
CLK
Write Cycle
Write Recovery Time
t
WR
t
DQW
14
14
ns
7
DQM Write Mask Latency
0
0
CLK
AC Characteristics
(cont
d)
1, 2
T
CASE
= 0 to 70
°
C
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symb.
Unit
Note
-7.5
-8
min.
max.
min.
max.
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