參數(shù)資料
型號(hào): HYB39L128160AT-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBIT SYNCHRONOUS LOW-POWER DRAM
中文描述: 128 - Mbit同步低功率DRAM
文件頁數(shù): 25/49頁
文件大?。?/td> 938K
代理商: HYB39L128160AT-8
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
25
2003-02
0LQLPXP5HDGWR:ULWH,QWHUYDO
1RQ0LQLPXP5HDGWR:ULWH,QWHUYDO
the Write Command
Must be Hi-Z before
Bank A
CAS
latency = 2
t
, DQ’s
CK2
(Burst Length = 4, CAS latency = 2)
CLK
DQM
Command
NOP
T0
T1
NOP
DQZ
t
T2
T3
DIN A0
DIN A1
DIN A2
SPT03939
DIN A3
1 Clk Interval
Read A
Write A
T4
T5
NOP
NOP
T6
T7
NOP
T8
"H" or "L"
t
DQW
NOP
CAS
latency = 3
t
, DQ’s
CK3
CAS
latency = 2
t
, DQ’s
CK2
DOUT A0
(Burst Length = 4, CAS latency = 2, 3)
CLK
DQM
Command
NOP
Read A
T0
T1
NOP
NOP
T2
T3
the Write Command
Must be Hi-Z before
DOUT A0
DOUT A1
DIN B0
DIN B0
DIN B1
DIN B1
SPT03940
DIN B2
DIN B2
Read A
DQZ
t
NOP
T4
T5
Write B
NOP
T6
T7
NOP
T8
"H" or "L"
t
DQW
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