參數(shù)資料
型號： HYB514175BJ-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 256k x 16-Bit EDO-DRAM
中文描述： 256K X 16 EDO DRAM, 50 ns, PDSO40
封裝： 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù)： 8/22頁
文件大?。?/td> 177K
代理商： HYB514175BJ-50
HYB 514175BJ/BJL-50/-55/-60
256k
×
16 EDO-DRAM
Semiconductor Group
8
1998-10-01
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
118
–
122
–
138
–
ns
RAS to WE delay time
64
–
69
–
77
–
ns
15
CAS to WE delay time
27
–
27
–
32
–
ns
15
Column address to WE delay time
39
–
39
–
47
–
ns
15
OE command hold time
10
–
10
–
13
–
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
HPC
t
CP
t
CPA
t
COH
20
–
20
–
25
–
ns
CAS precharge time
8
–
8
–
10
–
ns
Access time from CAS precharge
–
27
–
27
–
32
ns
7
Output data hold time
RAS pulse width in hyper page mode
t
RAS
RAS hold time from CAS precharge
5
–
5
–
5
–
ns
50
200k 55
200k 60
200k ns
t
RHCP
27
–
27
–
32
–
ns
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle
time
t
PRWC
58
–
58
–
68
–
ns
CAS precharge to WE delay time
t
CPWD
41
–
41
–
49
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
–
5
–
5
–
ns
CAS hold time
10
–
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
10
–
ns
Write to RAS hold time
10
–
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
–
35
–
40
–
ns
AC Characteristics
(cont’d)5, 6
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
相關(guān)PDF資料
PDF描述
HYB 514400BJ-50 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM)
HYB514400BJ-50 Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 120 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
HYB514400BJ-80 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BT-60 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
HYB514400BT-70 RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514175BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJ-55 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
HYB514175BJL-55 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*