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參數(shù)資料
| 型號： | HYB514405BJL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4-Bit Dynamic RAM |
| 中文描述： | 1M X 4 EDO DRAM, 60 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-20 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 1361K |
| 代理商： | HYB514405BJL-60 |
Semiconductor Group 1 5.96
1 048 576 words by 4-bit organization
0 to 70 C operating temperature
Hyper Page Mode - EDO
Performance:
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
Standby power dissipation:
11 mW max.standby (TTL)
5.5 mW max.standby (CMOS)
1.1 mW max.standby (CMOS) for Low Power Version
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms for Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
-50
-60
-70
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
89
104
124
ns
Hyper page mode (EDO)
cycle time
20
25
30
ns
1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
Preliminary Information
HYB 514405BJ/BJL-50/-60/-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB514405BJL-70 | 1M x 4-Bit Dynamic RAM |
| HYB514800BJ-80 | 512kx8-Bit Dynamic RAM |
| HYB514800BJ-70 | 512kx8-Bit Dynamic RAM |
| HYB514800BJ | 512kx8-Bit Dynamic RAM |
| HYB514800BJ-60 | 512kx8-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514405BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB514800BJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
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