參數(shù)資料
型號: HYB514800BJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 512kx8-Bit Dynamic RAM
中文描述: 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
文件頁數(shù): 6/22頁
文件大?。?/td> 211K
代理商: HYB514800BJ-60
Semiconductor Group
130
AC Characteristics
4)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
-60
-70
-80
min.
max.
min.
max.
min.
max.
Random read or write
time
Read-write cycle time
t
RWC
Fast page mode
cycle time
t
RC
110
130
150
ns
165
185
205
ns
t
PC
45
45
50
ns
Fast page mode
read/write cycle time
t
PRWC
100
100
105
ns
Access time from
RAS
6) 11)
t
RAC
60
70
80
ns
Access time from
CAS
6) 11)
t
CAC
20
20
20
ns
Access time from
column address
6) 12)
t
AA
30
35
40
ns
Access time from
CAS precharge
6)
t
CPA
40
40
45
ns
CAS to output in
low-Z
6)
t
CLZ
0
0
0
ns
Output buffer turn-off
delay from CAS
7)
t
OFF
0
20
0
20
0
20
ns
Transition time
(rise and fall)
5)
t
T
3
50
3
50
3
50
ns
RAS precharge time
t
RP
t
RAS
t
RASP
40
50
60
ns
RAS pulse width
60
10000
70
10000
80
10000
ns
RAS pulse width in
fast page mode
60
200000
70
200000
80
200000
ns
CAS pulse width
t
CAS
t
RSH
t
CSH
t
RHCP
20
10000
20
10000
20
10000
ns
RAS hold time
20
20
20
ns
CAS hold time
60
70
80
ns
RAS hold time from
CAS precharge
(Fast page mode)
40
45
50
ns
CAS precharge to
WRITE delay time
(FPM read-modify-write)
t
CPWD
60
65
70
ns
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
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