參數(shù)資料
型號: HYB514800BJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 512kx8-Bit Dynamic RAM
中文描述: 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
文件頁數(shù): 2/22頁
文件大?。?/td> 211K
代理商: HYB514800BJ-60
Semiconductor Group
126
The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The
HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514800BJ to be packed in a standard plastic 400mil wide P-SOPJ-28 package. This
package size provides high system bit densities and is compatible with commonly used automatic
testing and insertion equipment. System oriented feature include single + 5 V (
±
10 %) power
supply, direct interfacing with high performance logic device families such as Schottky TTL.
Pin Definitions and Functions
Pin Configuration
(top view)
A0-A8,A9R
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
WRITE
Read/Write Input
OE
Output Enable
I
O1 -
I
O8
Data Input/Output
N.C.
V
CC
V
SS
No Connection
Power Supply (+ 5 V)
Ground (0 V)
P-SOJ-28-2 ( 400 mil width)
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
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