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參數(shù)資料
| 型號(hào)： | IDT10S60C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 中文描述： | 第二代thinQ！碳化硅肖特基二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 250K |
| 代理商： | IDT10S60C |
IDT10S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.5
K/W
Thermal resistance,
junction - ambient
R
thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm (0.063 in.) from
case for 10s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.14 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=10 A,
T
j
=25 °C
-
1.5
1.7
I
F
=10 A,
T
j
=150 °C
-
1.7
2.1
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
-
1.4
140
μA
V
R
=600 V,
T
j
=150 °C
-
5
1400
AC characteristics
Total capacitive charge
Q
c
-
24
-
nC
Switching time
3)
t
c
-
-
<10
ns
Total capacitance
C
V
R
=1 V,
f
=1 MHz
-
480
-
pF
V
R
=300 V,
f
=1 MHz
-
60
-
V
R
=600 V,
f
=1 MHz
-
60
-
4)
Only capacative charge occuring, guaranteed by design.
Values
V
R
=400 V,
I
F
≤
I
F,max
,
d
i
F
/d
t
=200 A/μs,
T
j
=150 °C
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Rev. 2.0
page 2
2006-03-14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT10S60C_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode |
| IDT10S60CXK | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 10A 2-Pin(2+Tab) TO-220 |
| IDT12S60C | 功能描述:肖特基二極管與整流器 2ND GEN THINQ 600V SiC Schottky Diode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| IDT12S60C_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode |
| IDT12S60CXK | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 12A 2-Pin(2+Tab) TO-220 |
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