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參數(shù)資料
| 型號(hào)： | IDT7130SA35FG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 35 ns, CQFP48 |
| 封裝： | 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, GREEN, CERAMIC, QFP-48 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IDT7130SA35FG |
9
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
T iming Waveform of Read Cycle No. 1, Either S ide
(1)
T iming Waveform of Read Cycle No. 2, Either S ide
(3)
NOTES:
1. Timng depends on which signal is asserted last,
OE
or
CE
.
2. Timng depends on which signal is deaserted first,
OE
or
CE
.
3. R/
W
= V
IH
and
OE
= V
IL
, and the address is valid prior to or coincidental with
CE
transition LOW.
4.
Start of valid data depends on which timng becomes effective last t
AOE
, t
ACE
,
t
AA
, and
t
BDD
.
ADDRESS
DATA
OUT
t
RC
t
OH
PREVIOUS DATA VALID
t
AA
t
OH
DATA VALID
2689 drw 08
t
BDDH
(2,3)
BUSY
OUT
NOTES:
1. R/
W
= V
IH
,
CE
= V
IL
, and is
OE
= V
IL
. Address is valid prior to the coincidental with
CE
transition LOW.
2. t
BDD
delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations,
BUSY
has no relationship to valid output data.
3. Start of valid data depends on which timng becomes effective last t
AOE
, t
ACE
, t
AA
, and t
BDD
.
CE
t
ACE
t
AOE
t
HZ
t
LZ
t
PD
VALID DATA
t
PU
50%
OE
DATA
OUT
CURRENT
I
CC
I
SS
50%
2689 drw 09
(4)
(1)
(1)
(2)
(2)
(4)
t
LZ
t
HZ
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| IDT7130SA35FGB | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7130SA35J | 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT7130SA35J8 | 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA35L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 35NS 48LCC |
| IDT7130SA35P | 功能描述:IC SRAM 8KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA35PF | 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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