參數(shù)資料
型號(hào)： IDTIDT71P71604200BQ
廠商： Integrated Device Technology, Inc.
英文描述： 18Mb Pipelined DDR⑩II SRAM Burst of 2
中文描述： 35.7流水線的DDR II SRAM的突發(fā)⑩2
文件頁(yè)數(shù)： 14/23頁(yè)
文件大?。?/td> 241K
代理商： IDTIDT71P71604200BQ
6.42
14
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 2 Commercial Temperature Range
T iming Waveform of Combined Read and Write Cycles
NOTE:
1. If a R/
W
is low on the next rising edge of K after a read request, the device automatically performs a NOP (No Operation.)
2. The second NOP cycle is not necessary for correct device operation; however at high clock frequencies, it may be required to prevent
the bus contention.
6112 drw09
K
K
1
2
3
LD
SA
tKHCH
tKHKL
tKHIX
tIVKH
tKHAX
tAVKH
C
C
CQ
CQ
tCHQX
tCHQX1
tDVKH
tKHDX
tKHDX
D20
D21
D30
D31
tDVKH
tKLKH
tCHCQV
tCHCQX
R/
W
DQ
4
5
6
7
tKLKH
tKHKH
tKH
K
H
A2
A1
A0
A3
tCHQV
tCHQX
tCHQV
tCQHQV
tKHCH
tKHKL
NOP
Read A0
(burst of 2)
Read A1
(burst of 2)
NOP
(Note 1)
Write A2
(burst of 2)
Read A4
(burst of 2)
8
Q00
Q01
Q10
Q11
Q40
Q41
NOP
A4
Qx1
tCHQZ
tKHKH
tKH
K
H
tCHCQX
tCHCQV
Write A3
(burst of 2)
9
10
tCQHQX
(NOTE 1)
(NOTE 2)
相關(guān)PDF資料
PDF描述
IDTIDT71P71604250BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804167BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804200BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804250BQ 18Mb Pipelined DDR⑩II SRAM Burst of 2
IDT71P73104 18Mb Pipelined DDR⑩II SRAM Burst of 4
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDTIDT71P71604250BQ 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804167BQ 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804200BQ 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P71804250BQ 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SRAM Burst of 2
IDTIDT71P79104167BQ 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2
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