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參數(shù)資料
| 型號(hào)： | IDTIDT71P79804250BQ |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| 中文描述： | 35.7流水線⑩二二氧化硅的DDR SRAM的爆裂2 |
| 文件頁(yè)數(shù)： | 7/23頁(yè) |
| 文件大小： | 641K |
| 代理商： | IDTIDT71P79804250BQ |
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IDT71P79204 (2Mx8-Bit), 71P79104 (2Mx9-Bit), 71P79804 (1Mx18-Bit) 71P79604 (512Kx36-Bit)
18 Mb DDR II SIO SRAM Burst of 2 Commercial and Industrial Temperature Ranges
Pin Configuration IDT71P79804 (1M x 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
V
SS
/
SA
(3)
NC/
SA
(1)
R/
W
BW1
K
NC
LD
SA
V
SS
/
SA
(2)
CQ
B
NC
Q
9
D
9
SA
NC
K
BW0
SA
NC
NC
Q
8
C
NC
NC
D
10
V
SS
SA
SA
SA
V
SS
NC
Q
7
D
8
D
NC
D
11
Q
10
V
SS
V
SS
V
SS
V
SS
V
SS
NC
NC
D
7
E
NC
NC
Q
11
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC
D
6
Q
6
F
NC
Q
12
D
12
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
NC
Q
5
G
NC
D
13
Q
13
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
NC
D
5
H
Doff
V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J
NC
NC
D
14
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
Q
4
D
4
K
NC
NC
Q
14
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
D
3
Q
3
L
NC
Q
15
D
15
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC
NC
Q
2
M
NC
NC
D
16
V
SS
V
SS
V
SS
V
SS
V
SS
NC
Q
1
D
2
N
NC
D
17
Q
16
V
SS
SA
SA
SA
V
SS
NC
NC
D
1
P
NC
NC
Q
17
SA
SA
C
SA
SA
NC
D
0
Q
0
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
6432 tbl 12b
165-ball FBGA Pinout
Top View
NOTES:
1. A3 is reserved for the 36Mb expansion address.
2. A10 is reserved for the 72Mb expansion address. This must be tied or driven to VSS on the 1Mx 18 DDRII SIO Burst of 2 (71P79804) devices.
3. A2 is reserved for the 144Mb expansion address. This must be tied or driven to VSS on the 1Mx 18 DDRII SIO Burst of 2 (71P79804) devices.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDTIDT71P79804250BQI | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804267BQ | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| IDTIDT71P79804267BQI | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
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