參數(shù)資料
型號： IRF1405ZS-7PPBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A )
中文描述： ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 55V的，的RDS（on）\u003d4.9米ヘ，身份證\u003d 120A條）
文件頁數(shù)： 2/12頁
文件大?。?/td> 700K
代理商： IRF1405ZS-7PPBF
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.064mH, R
G
= 25
, I
AS
= 88A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
Solder mounted on IMS substrate.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
SMD
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
55
–––
–––
2.0
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.054
–––
3.7
4.9
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
150
230
37
–––
64
–––
16
–––
140
–––
170
–––
130
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5360
1310
340
6080
920
1700
–––
–––
–––
–––
–––
–––
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
150
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
590
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
–––
–––
–––
–––
63
160
1.3
95
240
V
ns
nC
R
G
= 5.0
V
GS
= 10V
I
D
= 88A
V
DS
= 44V
V
GS
= 10V
V
DS
= 25V, I
D
= 88A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
DD
= 28V
I
D
= 88A
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
MOSFET symbol
Conditions
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 150μA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 88A
相關(guān)PDF資料
PDF描述
IRF1405Z AUTOMOTIVE MOSFET
IRF1405ZL AUTOMOTIVE MOSFET
IRF1405ZS AUTOMOTIVE MOSFET
IRF1405 Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
IRF1407L Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1405ZSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK
IRF1405ZSPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1405ZSTRL-7P 功能描述:MOSFET N-CH 55V 120A D2PAK7 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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