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參數(shù)資料
| 型號： | IRF7410PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 163K |
| 代理商： | IRF7410PBF |
Parameter
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to +150
8/25/06
www.irf.com
1
IRF7410PbF
HEXFET Power MOSFET
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
Power MOSFETs from
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
V
DSS
-12V
R
DS(on)
max
7m
@V
GS
= -4.5V
9m
@V
GS
= -2.5V
13m
@V
GS
= -1.8V
I
D
-
16A
-
13.6A
-
11.5A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7410TR | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -16A, 7 mOhm, 91 nC Qg, SO-8 |
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| IRF7413_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET POWER MOSFET |
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