參數(shù)資料
型號(hào): IRF7410PBF
廠商: International Rectifier
英文描述: HEXFET㈢Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁數(shù): 4/9頁
文件大?。?/td> 163K
代理商: IRF7410PBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
-
G
I =
-16A
V
=-9.6V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 °
J
C
-V , Drain-to-Source Voltage (V)
D
-
100us
1ms
10ms
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C
12000
14000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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