參數(shù)資料
型號(hào)： IRF7410PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大小： 163K
代理商： IRF7410PBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
97
134
-1.2
145
201
V
ns
μC
Source-Drain Ratings and Characteristics
65
2.5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Surface mounted on 1 in square Cu board, t
≤
10sec.
Parameter
Min. Typ. Max. Units
-12
–––
––– 0.006 –––
–––
–––
–––
–––
-0.4
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
91
–––
18
–––
25
–––
13
–––
12
–––
271
–––
200
––– 8676
––– 2344
––– 1604
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -16A
V
GS
= -2.5V, I
D
= -13.6A
V
GS
= -1.8V, I
D
= -11.5A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -16A
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
V
GS
= -8V
V
GS
= 8V
I
D
= -16A
V
DS
= -9.6V
V
GS
= -4.5V
V
DD
= -6V, V
GS
= -4.5V
I
D
= -1.0A
R
D
= 6
R
G
= 6
V
GS
= 0V
V
DS
= -10V
= 1.0MHz
V/°C
7
9
13
-0.9
–––
-1.0
-25
-100
100
–––
–––
–––
20
18
407
300
–––
–––
–––
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
I
GSS
μA
m
R
DS(on)
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
nA
ns
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