參數(shù)資料
型號： IRF7422D2
廠商： International Rectifier
英文描述： Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管)
中文描述： 共同封裝的HEXFET功率MOSFET和肖特基二極管（同封裝的HEXFET晶體管和肖特基二極管）
文件頁數(shù)： 1/8頁
文件大?。?/td> 132K
代理商： IRF7422D2
IRF7422D2
8/21/98
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
SO-8
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
≤
-2.2A, di/dt
≤
-50A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs – duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
www.irf.com
8
1
2
3
4
5
6
7
D
D
D
D
G
S
AA
A
Top View
A
V
DSS
= -20V
R
DS(on)
= 0.09
Schottky Vf = 0.52V
FETKY
MOSFET & Schottky Diode
TM
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
PRELIMINARY
PD- 91412J
1
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Thermal Resistance Ratings
Parameter
Maximum
-4.3
-3.4
-33
2.0
1.3
16
± 12
-5.0
-55 to +150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
Ideal For Buck Regulator Applications
l
P-Channel HEXFET
l
Low V
F
Schottky Rectifier
l
Generation 5 Technology
l
SO-8 Footprint
Continuous Drain Current, V
GS
@ -4.5V
Power Dissipation
A
W
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7422D2HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 4.3A 8SOIC - Rail/Tube
IRF7422D2PBF 功能描述:MOSFET 20V FETKY 12 VGS 140 RDS 2.7VmOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7422D2TR 功能描述:MOSFET P-CH 20V 4.3A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRF7422D2TRPBF 功能描述:MOSFET MOSFT PCh w/Schttky -4.3A 90mOhm 15nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7423TR 功能描述:MOSFET N-CH 30V 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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