參數(shù)資料
型號(hào)： IRF7495PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 8/8頁(yè)
文件大?。?/td> 156K
代理商： IRF7495PBF
IRF7495PbF
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 4.4A.
When mounted on 1 inch square copper
board, t
≤
10 sec.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
I
SD
≤
5.8A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/04
相關(guān)PDF資料
PDF描述
IRF7495 HEXFET Power MOSFET
IRF7503PBF HEXFET㈢ Power MOSFET
IRF7521D1 FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)
IRF7524D1 Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管)
IRF7534D1 Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7495TR 功能描述:MOSFET N-CH 100V 7.3A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF7495TRPBF 功能描述:MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7501 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8
IRF7501HR 制造商:International Rectifier 功能描述:20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE - Rail/Tube
IRF7501PBF 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*