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參數(shù)資料
| 型號： | IRF7524D1 |
| 廠商： | International Rectifier |
| 英文描述： | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| 中文描述： | 共同封裝的HEXFET功率MOSFET和肖特基二極管（同封裝的HEXFET晶體管和肖特基二極管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 151K |
| 代理商： | IRF7524D1 |
IRF7524D1
PRELIMINARY
Description
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
P-Channel HEXFET
l
Low V
F
Schottky Rectifier
l
Generation 5 Technology
l
Micro8
TM
Footprint
V
DSS
= -20V
R
DS(on)
= 0.27
Schottky Vf = 0.39V
FETKY
MOSFET & Schottky Diode
TM
Micro8
TM
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤
-1.2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs – duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
01/29/99
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
1
Absolute Maximum Ratings
Parameter
R
θ
JA
Maximum
100
Units
°C/W
Junction-to-Ambient
Thermal Resistance Ratings
Parameter
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Power Dissipation
A
W
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
TM
package, with half the footprint area of the standard SO-8, provides
TM
an ideal
TM
will allow it to fit easily into extremely thin application
PD -91648C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7524D1GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FETKY MOSFET & Schottky Diode |
| IRF7524D1GTRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7524D1PBF | 功能描述:MOSFET FETKY -20V 0.27Ohm Vf 0.39V Micro8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7524D1TR | 功能描述:MOSFET P-CH 20V 1.7A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7524D1TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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