- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377507 > IRF7534D1 (International Rectifier) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) PDF資料下載
參數(shù)資料
| 型號： | IRF7534D1 |
| 廠商： | International Rectifier |
| 英文描述： | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| 中文描述： | 共同封裝的HEXFET功率MOSFET和肖特基二極管（同封裝的HEXFET晶體管和肖特基二極管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 106K |
| 代理商： | IRF7534D1 |
FETKY
MOSFET & Schottky Diode
3/22/00
IRF7534D1
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter Max.
Maximum Junction-to-Ambient
Units
100 °C/W
R
θ
JA
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤
-1.2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs – duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
Parameter
Max.
-20
-4.3
-3.4
-34
1.25
0.8
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage
± 12 V
dv/dt
Peak Diode Recovery dv/dt
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
1.1
V/ns
°C
-55 to + 150
V
DSS
= -20V
R
DS(on)
= 0.055
Schottky Vf=0.39V
Micro8
G
Co-packaged HEXFET
power
MOSFET and Schottky diode
G
Ultra Low On-Resistance
MOSFET
G
Trench technology
G
Micro8
TM
Footprint
G
Available in Tape & Reel
Description
PD -93864
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier’s low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8
TM
package makes an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro8
TM
will allow it to
fit easily into extremely thin application environments such as portable electronics
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7555 | HEXFET Power MOSFET(HEXFET 功率 MOS場效應(yīng)管) |
| IRF7726 | Power MOSFET(Vdss=-30V) |
| IRF7751 | RES 8K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| IRF7752 | Dual N-Channel MOSFET(雙 N溝道 MOS場效應(yīng)管) |
| IRF7754 | Power MOSFET(Vdss=-12V) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7534D1PBF | 功能描述:MOSFET P-CH 20V 4.3A MICRO-8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7534D1TR | 功能描述:MOSFET P-CH 20V 4.3A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7555 | 制造商:International Rectifier 功能描述:MOSFET DUAL PP MICRO-8 |
| IRF7555HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRF7555PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL PP MICRO-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。