- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377507 > IRF7524D1 (International Rectifier) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) PDF資料下載
參數(shù)資料
| 型號： | IRF7524D1 |
| 廠商： | International Rectifier |
| 英文描述： | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| 中文描述： | 共同封裝的HEXFET功率MOSFET和肖特基二極管（同封裝的HEXFET晶體管和肖特基二極管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IRF7524D1 |
IRF7524D1
2
www.irf.com
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-20
–––
–––
0.17 0.27
–––
0.28 0.40
-0.70 –––
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.4
–––
0.96
–––
2.4
–––
9.1
–––
35
–––
38
–––
43
–––
240
–––
130
–––
64
Conditions
–––
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -1.2A
V
GS
= -2.7V, I
D
= -0.60A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -0.60A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -1.2A
V
DS
= -16V
V
GS
= -4.5V, See Fig. 6
V
DD
= -10V
I
D
= -1.2A
R
G
= 6.0
R
D
= 8.3
,
V
GS
= 0V
V
DS
= -15V
= 1.0MHz, See Fig. 5
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-1.0
-25
-100
100
8.2
1.4
3.6
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
I
GSS
μA
nA
ns
Parameter
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
52
–––
63
Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
-1.25
-9.6
-1.2
78
95
V
ns
nC
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.2A
di/dt = 100A/μs
A
Parameter
Max. Units
1.9
1.4
120
11
Conditions
I
F(av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
Fig.14
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
T
A
= 70°C
Following any rated
I
SM
Max. peak one cycle Non-repetitive
Surge current
with V
RRM
applied
A
A
Parameter
Max. Units
0.50
0.62
0.39
0.57
0.02
8
92
3600 V/ μs Rated V
R
Conditions
V
FM
Max. Forward voltage drop
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 20V
mA
I
RM
Max. Reverse Leakage current
T
J
= 25°C
T
J
= 125°C
C
t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
See
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7534D1 | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| IRF7555 | HEXFET Power MOSFET(HEXFET 功率 MOS場效應(yīng)管) |
| IRF7726 | Power MOSFET(Vdss=-30V) |
| IRF7751 | RES 8K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| IRF7752 | Dual N-Channel MOSFET(雙 N溝道 MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7524D1GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FETKY MOSFET & Schottky Diode |
| IRF7524D1GTRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7524D1PBF | 功能描述:MOSFET FETKY -20V 0.27Ohm Vf 0.39V Micro8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7524D1TR | 功能描述:MOSFET P-CH 20V 1.7A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7524D1TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -1.7A 270mOhm 5.4nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。