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參數(shù)資料
| 型號(hào)： | IRF7752 |
| 廠商： | International Rectifier |
| 英文描述： | Dual N-Channel MOSFET(雙 N溝道 MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 雙N溝道MOSFET（馬鞍山雙?溝道場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | IRF7752 |
HEXFET
Power MOSFET
R
DS(on)
max
0.030@V
GS
= 10V
0.036@V
GS
= 4.5V
PD -94030
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
IRF7752
Description
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.1mm)
l
Available in Tape & Reel
TSSOP-8
Parameter
Max.
30
±4.6
±3.7
±37
1.0
0.64
8.0
± 12
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
Parameter
Max.
125
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
10/31/00
V
DSS
30V
I
D
4.6A
3.9A
4
3
2
1
1 = D1
2 = S1
3 = S1
4 = G1
8 = D2
7 = S2
6 = S2
5 = G2
5
6
7
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7752GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF7752GTRPBF | 功能描述:MOSFET MOSFT DUAL NCh 30V 4.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7752HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 4.6A 8-Pin TSSOP |
| IRF7752TR | 功能描述:MOSFET 2N-CH 30V 4.6A 8-TSSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7752TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 30V 4.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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