參數(shù)資料
型號： IRF7910
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 8/8頁
文件大?。?/td> 122K
代理商： IRF7910
IRF7910
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 3.2mH
R
G
= 25
, I
AS
= 8.0A.
Pulse width
≤
300μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t<10 sec
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial
market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
4/02
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相關代理商/技術參數(shù)
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IRF7910HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 12V 10A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 12V 10A 8SOIC - Rail/Tube
IRF7910PBF 功能描述:MOSFET 12V DUAL N-CH HEXFET 15mOhms 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7910PBF_08 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRF7910TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 12V 10A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 12V 10A 8SOIC - Tape and Reel
IRF7910TRPBF 功能描述:MOSFET MOSFT DUAL NCh 12V 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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