參數(shù)資料
型號(hào): IRFB4310
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 3/11頁
文件大?。?/td> 383K
代理商: IRFB4310
www.irf.com
3
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID
(
)
VDS = 50V
60μs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RD
ID = 75A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
0
4
8
12
16
20
VG
VDS= 80V
VDS= 50V
VDS= 20V
ID= 75A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
60μs PULSE WIDTH
Tj = 25°C
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID
60μs PULSE WIDTH
Tj = 175°C
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
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